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This letter reveals the physical and electrical properties of silicon dioxide (Si02) formed by the plasma selective oxidation (plasma selox) using 02 and H2 gas mixture, which is applicable to sub-50-nm tungsten-polymetal gate memory devices without capping nitride film. Metal-oxide-semiconductor capacitors with gate oxide formed by the plasma selox at the process temperature in the range of 400degC-700degC...
By inserting thin WSix layer in tungsten poly gate stack we can effectively relieve the mechanical stress of gate hard mask nitride film, which contributes to the better gate oxide reliability and stress-immunity of transistor. This insertion also could prevent the formation of Si-N dielectric layer atop poly-Si, which could lower the contact resistance between poly and tungsten effectively
We applied a very low-temperature plasma-type selective gate reoxidation process to W/poly-Si gate for suppression of abnormal oxidation of a low contact resistive WSix/WN diffusion barrier. The device with the plasma selective gate reoxidation showed superior gate oxide reliability and improved stress immunity of transistor compared to the thermally selective gate reoxidized devices
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