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In this research, the DC and RF characteristics for our own InAlAs/InGaAs InP-based high-electron-mobility transistors (HEMTs) with 0-nm, 50-nm, and 200-nm silicon-nitride (Si 3 N 4 ) passivation films have been investigated comprehensively and systematically. With increasing Si 3 N 4 passivation film thickness, the device exhibits an apparent...
A W-band two-stage amplifier MMIC has been developed using a InP-based high electron mobility transistor (HEMT) technology. The two-stage amplifier has been realized in combination with coplanar waveguide topology and cascode transistors, thus leading to a compact chip-size of 1.85 mm×0.932 mm and an excellent small-signal gain of 25.7 dB at 106 GHz. The successful design of the two-stage amplifier...
Two MMIC amplifiers have been developed in coplanar technology using 50-nm InAlAs/InGaAs HEMTs. The first is a sing-stage amplifier which used balanced double-stub matching networks for both input and output impedances matching. Measured gain is 8.2 dB @ 81.3 GHz, and the 3-dB bandwidth is at least 13.7 GHz. The second is a two-stage common-source power amplifier. A “#” type distributed transmission...
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