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The authors have successfully fabricated MBE-grown GaAs field effect transistors employing a strained MQW buffer layer. Quarter micron gate device showed transconductance as high as 1.460 mS/mm (900 mS/mm extrinsic) at a current density of 620 mA/mm. The measured f/sub c/ was 75 GHz. These high transconductances are, to the authors' knowledge, the best reported for GaAs MESFETs.<<ETX>>
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