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We give a summary of the low-temperature preparation methods of ZnS(110) and GaP(100) crystals for epitaxial growth of ZnS and Cu2ZnSnS4 (CZTS) via molecular beam epitaxy. Substrates were prepared for epitaxial growth by means of room-temperature aqueous surface treatments and subsequent ultra-high vacuum transfer to the deposition system. Epitaxial growth of ZnS was successful at 500K on both ZnS(110)...
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