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In summary, we have presented the experimental results for characterizing the temperature dependence of Ge/Si SACM APDs. The dark current increases by a factor 2 every 10οC at Vbias= -15V. Due to the temperature dependence of the ionization rate, the gain G increases by around 1.3 times for a temperature reduction of ΔT=10οC. The measured GBP is over 400GHz and The GBP is not sensitive to the temperature...
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