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A linear power amplifier (PA) is proposed for EDGE application in cellular and PCS bands, using a standard 0.18 µm CMOS technology. The linear PA is adaptively biased according to its power level to efficiently enhance AM-AM characteristics. Nonlinear gate-drain capacitance (C ) of power transistors, which is one of the major sources of AM-PM nonlinearity, is effectively linearized by adding...
The highly efficient CMOS power amplifier module (PAM) is designed for quad-band cellular handsets comprising GSM850, EGSM, DCS, PCS and supports Class 12 general packet radio service (GPRS) multi-slot operation. This module integrates an input matching network, a complete power control, and a thermal, over current, and load mismatch protection in a standard RF CMOS process and also contains a high-Q...
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