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Thermal annealing in NH 3 -ambient was carried out to form p-type ZnO films. The properties were examined by X-ray diffraction (XRD), Hall-effect measurement, photoluminescence (PL), and secondary ion mass spectrometry (SIMS). Electron concentrations in ZnO films were in the range of 10 15 –10 17 /cm 3 with thermal annealing in NH 3 -ambient. The activation...
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