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The effects of ion implantation and subsequent annealing on the surface morphology of thin amorphous chalcogenide films of the As-Se system have been studied. Ion implantation of nitrogen (N + ) with an energy E=100keV and high doses (typically D=1.10 16 cm -2 ) has been carried out at room temperature. Subsequent thermal annealing treatments near the melting temperature...
Here we present some results of ion implantation and subsequent annealing effects on the surface morphology of thin (d~1μm) amorphous As 3 Se 2 films. Ion implantation of nitrogen (N + ) with different energies (E=50, 100 and 150keV) and high doses (typically D=1.10 16 cm -2 ) has been carried out at room temperature. Subsequent thermal annealing treatments...
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