The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report on the photoresponse dependence on the terahertz radiation intensity in AlGaN/GaN HEMTs. We show that the AlGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm². The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two...
Terahertz (THz) light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors and silicon metal oxide semiconductor field effect transistors is reported. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse...
We report on the observation of photocurrents in GaAs High Electron Mobility and Si Field Effect Transistors. We show that illuminating the samples with high power terahertz laser radiation causes electric currents. These currents are driven by plasmonic effects in two dimensional electron gases.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.