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In response to the continually increasing appetite for bandwidth, most transistor technologies have recently made great strides towards higher cutoff frequencies: Silicon MOSFETs, SiGe HBTs, InP-based HEMTs and a variety of InP -based HBTs all show cutoff frequencies fT and/or fMAX exceeding 300 GHz, and in some cases approaching 800 GHz. Proponents of various technologies have stated that the development...
We describe the realization of ternary base InP/Ga(As,Sb) DHBTs, where the grading is implemented by ramping the base As/Sb composition ratio from the collector to the emitter side: this enables a cutoff frequency fT of 603 GHz at room temperature with a breakdown voltage BVCEO = 4.2 V, for a record fTxBVCEO product of 2.53 THz-V. Device performance improves further with cooling to reach fT ≫ 700...
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