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InP/GaAsSb/InP DHBTs with 125 and 150 nm collector thicknesses were fabricated by optical contact lithography in a standard triple mesa process. It is shown that a peak current-gain cut-off frequency fT = 343 GHz and maximum oscillation frequency fMAX = 351 GHz were simultaneously achieved on devices with an emitter area of 0.6 × 11.5 μm2 and a 150 nm collector. To the best of our knowledge, these...
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