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VOx thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400degC for 2 hours. The film also shows a polycrystal structure with grain size from 50 nm to 150 nm. The VOx thin films fabricated by this process have a TCR up to -2.7% at room temperature. Our results indicate...
A novel process of room temperature ion beam sputtering deposition of vanadium oxide films and low temperature post annealing for uncooled infrared detectors was proposed in this work. VOx thin films with relatively low square resistance (70 K Omega / square) and large temperature coefficient of resistance (more than 3%/K) at room temperature were fabricated using this low temperature process which...
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