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In this paper,we fabricate a lateral phase change memory device composed of a Ge2Sb2Te5 nanowire (GST NW) fully confined in a tungsten electrode nanogap. A SiNx spacer is used not only as etch mask for the fabrication of the GST NW, but also as sacrificial layer for the lift-off process, which makes it feasible to fully confine the GST NW in the metal electrode nanogap. Electrical characterization...
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