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AlN boules, 35mm in diameter and up to 25-mm long, were grown on TaC crucible lid in an inductively heated reactor. The growth rates range between 100 and 300μm/h. The boules grown on TaC show a columnar structure mostly composed of 〈0001〉 grains. The largest grains (4–5mm in diameter) were sliced and used for subsequent growth runs. Successful epitaxial seeding and growth on the starting AlN wafer...
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