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The structural properties of the heteroepitaxially grown AlN on off-axis 4H-/6H-SiC by PVT are presented in dependence of the seed polarity. In addition to long-term growth runs (48–72h) short-term experiments were carried out in order to investigate the initial growth stage. SEM, EDX, HR-TEM and HR-XRD studies show different growth modes for C-polar and Si-polar SiC seeds. The main cause is the anisotropic...
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