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Strain‐gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at the metal‐MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic‐layer‐thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel...
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