The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Electrical instability and nonideality due to undesirable electron injection are often‐encountered problems for high‐mobility organic field‐effect transistors (OFETs) with low‐bandgap polymer semiconductors. Due to electron trapping and the resulting accumulation of negative charges on the silicon dioxide dielectric, transfer curves deviate from ideality characteristics and double‐slopes are observed...
The mechanism of electrical instability and the double slope of p‐type organic field‐effect transistors (OFETs) fabricated from low‐bandgap donor–acceptor copolymers are resolved. Those polymers enable electron conduction in the device, which leads to electron trapping and consequent formation of –SiO−. This causes a turn‐on voltage shift, hole‐mobility increase, and double‐slope occurrence. These...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.