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We report on passive Q-switching of a Ho:KLu(WO4)2 (Ho:KLuW) microchip laser in-band-pumped by a Tm:KLuW laser at $\sim 1.96\mu \text{m}$ . As a saturable absorber, PbS-quantum-dot-doped glass was used which exhibits a saturation intensity of $\sim 3$ MW/cm$^{\mathrm {{2}}}$ near 2 $\mu \text{m}$ . Maximum average output power of 84 mW was achieved from the Ho laser at 2.061 $\mu \text{m}$ ...
A diode-pumped Tm, Ho:KLu(WO4)2 microchip laser Q-switched by a Cr2+:ZnS saturable absorber generated average output power of 131 mW at 2061 nm. The shortest pulses had duration of 9 ns and energy of 10 μJ.
Nonlinear index was investigated in undoped and Yb-doped monoclinic double-tungstates for EparNm and EparNp polarized 819 nm light. Anisotropic n2 with maximum for EparNm in all investigated compounds is proportional to the rare earth ion polarizability.
Maximum output powers of 1.4 and 4 W and slope efficiencies of 60 and 69% were obtained with a Tm:KLu(WO4)2 laser near 2 mum under Ti:sapphire and diode laser pumping, respectively.
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