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An electrostatic discharge (ESD) strengthening design of high-voltage (HV) n-channel laterally diffused metal–oxide semiconductor (nLDMOS) transistors combined with embedded-SCR anode islands is investigated. After a systematic layout implementation and analysis, the anti-ESD robustness [or secondary breakdown current (It2)] of drain pnp-arranged and SCR isolated-type DUTs were higher than 7-A (ESD...
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