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Ga doping in indium zinc oxide (IZO)‐based amorphous‐oxide semiconductors (AOSs) promotes the formation of oxide‐lattice structures with oxygen vacancies at low annealing temperatures, which is essential for acceptable thin‐film‐transistor performance (see figure). The mobility dependence on annealing temperature and AOS composition are analyzed and the chemical role of Ga is clarified, as required...
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