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We evaluate and compare the electronic properties of hot-wire CVD deposited a-Si:H and a-Si,Ge:H films with those produced by the glow discharge (PECVD) method. A good indicator of film quality with respect to solar cell applications is the narrowness of the band tail widths determined by transient photocapacitance (TPC) spectroscopy. We focus on the excellent electronic properties of hot-wire CVD...
We grow hydrogenated amorphous silicon (a-Si:H) solar cells in a device structure denoted as SS/n-i-p/ITO. We grow all the a-Si:H layers by hot-wire chemical vapor deposition (HWCVD) and the indium-tin-oxide (ITO) by reactive evaporation. We are able to grow HWCVD i-layer materials that maintain an AM1.5 photoconductivity-to-dark-conductivity ratio of 10 5 at deposition rates up to 130 Å/s...
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