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In this work, we report our recent observations on strong reduction in Staebler-Wronski (SWE) [1] effect in device quality a-Si:H that has been post-deposition annealed up to 400C [2], and make a connection between these observations and changes in a-Si:H network nanostructure and H bonding, both from our own FTIR and NMR measurements and from the SAXS and NMR literature. The results suggest that...
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