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We demonstrate that epitaxial layers with a wide range of controllable dopant densities (7×10 15 –3×10 18 /cm 3 and 10 17 –10 18 /cm 3 for n-type and p-type, respectively) can be grown on wafer substrates at 700±25 °C by hot-wire chemical vapor deposition. Phosphorus from PH 3 is incorporated into the film more efficiently than silicon from SiH...
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