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In this paper, we propose a UV-A sensor based on a 6H-SiC Schottky photodiode with a thin Ni2Si front electrode and an integrated hydrogenated silicon nitride (SiN:H) dielectric filter. 6H-SiC prototypes were fabricated by using a manufacturing process to a large extent already implemented on 4H-SiC poly-type for the realization of a high signal-to-noise ratio ultraviolet (UV) sensor already commercialized...
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