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Beryllium-containing ZnSe-based compound semiconductors introduce substantial additional degrees of freedom for the design of wide gap II-VI heterostructures. An overview of the advantages of beryllium chalcogenides is given here. A variety of BeTe-ZnSe and BeMgZnSe-ZnSe structures has been fabricated by molecular beam epitaxy, and their structural, optical and electrical properties have been investigated...
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