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NAND flash memory is widely used in digital cameras, USB devices, cell phones, camcorders and solid-state drives. Continuous lowering of bit cost, increasing flash-memory-die densities and improving performance have helped to expand flash markets. Recently, there are two different directions to meet market demands. One is lowering bit cost and increase memory density to the utmost limit, which is...
A zero VTH memory cell scheme for the ferroelectric (Fe)-NAND flash memory is proposed. In the zero VTH memory cell scheme, the middle of VTH of erased and programmed cells is 0 V. Based on the measurement, this paper shows for the first time that the reliability of a Fe-NAND cell such as the data retention, read disturb, and program disturb is best optimized in the proposed zero VTH cell. The measured...
Today NAND flash memory is used for data and code storage in digital cameras, USB devices, cell phones, camcorders, and solid-state disk drives. To satisfy the market demand for lower cost per bit and higher density nonvolatile memory, in addition to technology scaling, 2 b/cell MLC technology was introduced. Recently MLC NAND flash memories with more than 2 b/cell have been reported. To meet market...
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