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Cluster C implantation at low temperature has been studied in terms of amorphous Si (a-Si) formation and elimination of B implanted induced end of range defects (EORDs). Thickness of a-Si can be controlled by C equivalent energy and dose. Monomer C never creates a-Si layer at less than 1E15/ cm2 at 25°C implant. Dose increase and temperature decrease starts to create a-Si layer. On the other hand,...
Terahertz spectroscopy of paint films has been studied in a range from 0.1 to 18 THz. The paint layers in actual use showed strong-absorption at higher frequency range, however they showed transparent characteristics in sub-THz range. Hence, sub-terahertz imaging of a painted steel plate as a method of nondestructive inspection was performed using a wave ranging from 100 to 200 GHz. An invisible rusty...
Results of a TCA (thermal cycle annealing) experiment on UCGAS (undercut GaAs on Si) in which the GaAs-Si interface is partially etched to separate the GaAs layer from the substrate are reported. The structure is developed to reduce the thermal stress in GaAs grown on Si. A drastic EPD (etch pit density) reduction by TCA is observed by eliminating the GaAsSi interface which acts as a dislocation source,...
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