The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The performance of the electron deceleration was evaluated for some silicon field emitter arrays (Si:C-FEAs) with different emitter-gate geometries. Although FEAs with lower emitter showed higher extraction voltage, they showed better deceleration performance. As a result, it was shown that FEAs with lower emitter height may be applicable for the low energy electron source.
Advanced ion implantation systems require transportation to wafer of space charge dominated ion beams. Compensation of ion beam divergence may be obtained through electron injection and confinement in regions of non-uniform magnetic fields. Electron sources of choice are field emitter arrays with special properties. Modeling results are presented as proof of concept, together with design aspects for...
In this study, the transport property of low energy ion beam (500 eV Ne+) is evaluated under space-charge compensated situation by means of supplying low energy electrons from the Si:C-FEA with decelerative electrodes.
The authors have proposed space charge compensation of a low energy ion beam with silicon field emitter arrays to solve the problem of divergence of low energy ion beam for next generation of ion-implantation system. It is required for the electron sources that they do not contain metal to prevent a wafer from contamination. Therefore, as electron sources, a silicon field emitter arrays treated with...
As the state of the art, ion implantation techniques require high-current ion beams with the lower energy, as the dimension of the devices becomes smaller. However, it is difficult to drive the lower-energy ion beams straightly, due to the huge ionic space charge. We proposed utilization of electron beam emitted from silicon field emitter arrays (Si-FEA) for compensation of the ionic positive space...
Field emitter arrays made of silicon (Si-FEAs) is a possible candidate for the space charge compensation device during ion implantation process for semiconductor devices, because they are free from metal contamination and have less out-gas. When operating in the ion implanter, Si-FEAs suffer from the pressure increase due to out-gassing from resist materials on a silicon wafer. We examined electron...
The purpose of the present study is to demonstrate the feasibility of plasma treated silicon field emission arrays used as a charge neutralization device in ion implantation system. Silicon field emission arrays (Si-FEAs) were treated in plasma to form carbonized layer. Electron emission properties of the plasma treated Si-FEAs have been measured in various gaseous ambient. The examined gases were...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.