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A non-linear pHEMT core model for switch applications is described. The model combines an accurate CV function below pinch-off and a 2D CV function above pinch-off for charge/capacitance modeling. The model has detailed leakage equations near and beyond pinchoff and a dispersion function covering a wide bias range. The model was verified by comparison with modeled and measured data, including IV/transfer...
A small-scale pseudospark discharge is being investigated as the electron beam source for a klystron operating at a frequency of 94 GHz, and single-gap discharge experiments have been carried out. The klystron has been designed using the particle-in-cell (PiC) code MAGIC-2D and simulated output to date looks promising.
A small-scale pseudospark discharge is being investigated as the electron beam source for a klystron operating at a frequency of 94 GHz and single-gap discharge experiments have been carried out. The klystron has been designed using the particle-in-cell (PiC) code MAGIC-2D and simulated output looks promising.
The Terahertz band of EM spectrum has received considerable research interests recently. A micro-klystron has the potential to meet the requirement of high power and compact terahertz source in many applications. The micro-klystron needs a very thin electron beam with sufficient current density. A pseudospark discharge cathode has the ability to provide high current density with small diameter electron...
In recent years much interest has been shown in radiation sources in the terahertz region (0.1 to 10THz) because of the demands in plasma diagnostics, radiotherapy, medical research and advanced communications. The Klystron is an ideal choice for THz generation due to its operation mechanism, efficiency and robustness as well as the fact that it may be scaled in size in order to achieve higher frequency...
Based on previous experimental investigations on pseudospark (PS) discharges, a small-scaled PS electron beam source was conceived to drive a 200GHz microklystron. Recent PS e-beam experiments producing a beam of 1mm in diameter and klystron interaction simulations will be presented. The microklystron will be fabricated using micro-electro-mechanical systems (MEMS) construction techniques.
A multicavity microklystron operating in the terahertz region has been designed and simulated. This microklystron will be driven by an electron beam sourced by a down-scaled pseudospark discharge.
A series of dilute InNSb films with different N composition were prepared at various growth conditions by RF-MBE. The film samples were characterized by Atom force microscopy (AFM), high resolution X-ray diffraction (HRXRD) and room temperature Raman scattering spectroscopy, the measurements indicated that the InNSb films are of high crystalline quality and most of the N atoms are at the substituted...
Summary form only given: Demands in plasma diagnostics, radiotherapy, medical research and advanced communications have in recent years resulted in the development of new radiation sources in the terahertz region (0.1 to 10 THz). A klystron is one attractive choice for generation of THz radiation due to its operation mechanism, efficiency and robustness and because its structure is amenable to being...
Summary form only given. Terahertz radiation, which ranges from 0.1 THz to 10 THz, has received substantial interests in recent years. The conventional vacuum electronics technology has the potential to supply high enough powers to underpin many exciting and emerging THz applications. Klystrons have been designed to generate THz radiation. This vacuum device requires a very small sized RF circuit...
Based on previous experimental investigations on pseudospark (PS) discharges, a small-scaled PS electron beam source was conceived to drive a 200 GHz microklystron. Recent PS e-beam experiments producing a beam of 1 mm in diameter and klystron interaction simulations will be presented. The microklystron will be fabricated using micro-electro-mechanical systems (MEMS) construction techniques.
This paper presents performance evaluation of high-kappa/metal gate (HK/MG) process on an industry standard 45 nm low power microprocessor built on bulk substrate. CMOS devices built with HK/MG demonstrate 50% improvement in NFET and 65% improvement in PFET drive current when compared with industry standard 45 nm Poly/SiON devices. No additional stress elements were used for this performance gain...
Rate and diversity impose a fundamental tradeoff in wireless communication. We propose a novel distributed space-time coding (DSTC) scheme based on linear constellation precoding (LCP) for Amplify-and-Forward relaying networks. The proposed scheme can achieve full-diversity or full-rate, and also offers a flexibility for a desired rate-diversity tradeoff. This scheme works well with arbitrary signal...
This work presents a 32 nm SOI CMOS technology featuring high-k/metal gate and an SRAM cell size of 0.149 mum2. Vmin operation down to 0.6 V in a 16 Mb SRAM array test vehicle has been demonstrated. Aggressive ground rules are achieved with 193 nm immersion lithography. High performance is enabled by high-k/metal gate plus innovation on strained silicon elements including embedded SiGe and dual stress...
This paper reports on new concept consisting of all-oxide-based device component for future high density non-volatile data storage with stackable structure. We demonstrate a GaInZnO (GIZO) thin film transistors (TFTs) integrated with 1D (CuO/InZnO)-1R (NiO) (one diode-one resistor) structure oxide memory node element. RRAM (Resistance Random Access Memory) has provided advantages in fabrication which...
Twisted direct silicon bonded (DSB) substrate demonstrates a higher hole mobility advantage over (110) bulk substrate for PFET. The mobility shows a (110) layer thickness dependence with the thinner DSB layer having a higher hole mobility. 25% on-current improvement is obtained for thin DSB PFETs at long channel (Lg= 2 mum), 10% higher at short channel (Lg = 36 nm) compared to (110) bulk PFETs. Moreover,...
Linear time variant (LTV) model is capable of making accurate predictions about phase noise in electrical oscillators, on the assumption that current-phase relation is linear. Unfortunately, this linearity assumption is not valid in the presence of high-power environmental noise. The proposed nonlinear time variant (NLTV) model modifies the existing LTV model, considering phase response saturation...
This paper presents for the first time (110) PMOS characteristics without Rext degradation, allowing investigation of fundamental mobility and demonstration of drive current Ion in excess of 1mA/mum at Ioff =100 nA/μm.
In this paper, we propose a flow-level simulator called FSIM (fluid-based simulator) for performance evaluation of large-scale networks, and verify its effectiveness using our FSIM implementation. The notable features of our flow-level simulator FSIM are its accuracy and fast simulation execution compared with conventional flow-level simulators. For improving simulation accuracy, our flow-level simulator...
This work demonstrates that the 2?? mobility advantage of (110) PMOS over (100) PMOS is maintained down to 190nm poly-pitch for devices under compressive stress. (110) PMOS with 3.5GPa compressively stressed liners demonstrate strong channel drives with Ion=800 ??A/??m at Ioff=100nA/??m (Vdd=1.0V) for 190nm poly-pitch, the highest reported to date for 45-nm-node (110) PMOS using conventional gate...
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