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We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorption modulation with extinction ratios > 14 dB by sufficient Moss-Burstein shift, for generic Ge-on-Si Photonics platform.
AimIt is unknown how the heart distinguishes various overloads, such as exercise or hypertension, causing either physiological or pathological hypertrophy. We hypothesize that alpha‐calcitonin‐gene‐related peptide (αCGRP), known to be released from contracting skeletal muscles, is key at this remodelling.
MethodsThe hypertrophic effect of αCGRP was measured in vitro (cultured cardiac myocytes) and...
The tunneling field effect transistor (TFET) is a device concept that has the potential to outperform CMOS technology both in energy efficiency and speed. One of the challenges for this device concept is to improve on-currents to meet industry standards. In order to attain this goal, a number of modifications to the basic design, concerning both material as well as geometry variations, have been proposed...
Si nanowires suitable for MOS transistors used for large area display applications have been fabricated. They were grown using vapor-liquid-solid (VLS) growth. All important characteristics of the nanowire are controlled. The wire diameter is controlled by patterning the substrate prior to the wire growth. Over 99% of the nanowires grow in the <111> direction vertical to the <111> substrate...
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