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III‐nitride light‐emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III‐nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent...
The ability to achieve deterministic placement of semiconductor quantum dots (QDs) opens up interesting possibilities for nanophotonic devices. By incorporating these QDs within microcavities, light-matter interaction can be tailored and enhanced, enabling phenomenon such as spontaneous emission enhancement, low threshold lasing, single photon emission and strong-coupling. The quality of these phenomena...
We report here the characteristics of photoelectrochemical (PEC) etching of epitaxial InGaN semiconductor thin films using a narrowband laser with a linewidth less than ∼1nm. In the initial stages of PEC etching, when the thin film is flat, characteristic voltammogram shapes are observed. At low photo-excitation rates, voltammograms are S-shaped, indicating the onset of a voltage-independent rate-limiting...
InGaN quantum dots at high densities (∼1011 dots/cm2) are demonstrated using metalorganic chemical vapor deposition combined with post growth processing of InGaN materials. Optical and structural studies are performed to characterize InGaN quantum dots.
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