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We have studied the chalcopyrite compound ZnGeAs2 to access its potential as a novel photovoltaic material. Thin films of ZnGeAs2 have been produced by pulsed laser deposition.The films are deposited at 315??C and are amorphous. They crystallize above 450??C and improve in crystallinity up to and including 600??C. At that temperature the Hall mobility is 55 ?? 2 cm2/Vs, which is within uncertainty...
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