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Using nanoscale inclusions of a wide‐band SiC semiconductor and SiO2 dielectric formed in CO+ molecular ion‐implanted (COII) layers allows creating highly resistive regions inside a moderate‐doped silicon substrate. Contrary to the well‐known implanted proton or argon‐ion insulation, where the high resistance is provided by the unstable radiation defect Fermi‐level pinning, such two‐type antidots...
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