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In this paper we report experimental results on the fabrication and characterization of vertical Ge gate-all-around p-channel TFETs, utilizing GeSn as a channel material. Through two sample series, the potential and challenges of implementing the low-band gap material GeSn are reviewed. It is verified that ION can be effectively enhanced by increasing the Sn-content in the GeSn-channel, due to increasing...
We present experimental results on the fabrication and characterization of vertical Si tunneling field-effect transistors (TFETs) in a device geometry with tunneling in line with the gate field. Compared to vertical Si TFETs without this geometry modification, on-currents are increased by more than one order of magnitude with at ...
The tunneling field effect transistor (TFET) is a device concept that has the potential to outperform CMOS technology both in energy efficiency and speed. One of the challenges for this device concept is to improve on-currents to meet industry standards. In order to attain this goal, a number of modifications to the basic design, concerning both material as well as geometry variations, have been proposed...
Addressing applications such as high performance RF power amplifiers and DC/DC converters with high conversion efficiency we demonstrate a cost effective integration of a complementary medium voltage RF LDMOS module in a 0.25 μm base CMOS flow. The integration of the NLDMOS and PLDMOS transistors requires just three additional mask steps. The NLDMOS has an excellent large signal RF performance...
The integration of RF NLDMOS transistors into a 0.13 μm CMOS process for operating at X-Band (8.5-10.5 GHz) frequencies with over 11 dB gain and 0.25 W/mm power density and 22% power added efficiency at 1 dB output power compression is presented. The self aligned NLDMOS was modularly integrated into IHP's 130 nm SiGeC BiCMOS platform targeting 1 W X-Band power amplifiers for radar and satellite communication...
This work presents some recent progresses in reliability assessment of electronic assemblies in automotive industry and shows how coupled numerical-experimental techniques can help us save time and reduce the cost of IC package qualification. In order to fulfill the continuous trends in miniaturization of the electronic devices together with the demands to shorten the time-to-market, it is essential...
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