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This paper describes a new concept of Silicon radiation detector with internal multiplication of the charge generated by the incident particle, known as Low Gain Avalanche Detector (LGAD), with a gain in the range of 10–20. The LGAD is addressed to tracking applications for high energy physics with enhanced performances compared to the conventional detectors based on the PiN diode structure. The physical...
The temperature impact on the Ohmic contact to Gallium Nitride (GaN) device properties is investigated in the range of 25°C to 300°C by means of the Transmission Line Method (TLM) technique. This study is centered in two kinds of Ohmic contacts: Implanted N+ GaN and heterojunction AlGaN/GaN contacts. For N+ contact resistance behavior is explained in terms of the field-effect or thermionic field effect...
The design and electrical performances of bulk silicon power LDMOS transistors for base station applications are analyzed in this paper. Power LDMOS transistors have been fabricated with a 7 mask levels process technology including a LOCOS in the drift region and a polysilicon field plate. On-state resistances in the range of 6 mOmega x cm2 have been experimentally measured on 80 V transistors. Moreover,...
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