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Electrical and optical properties of undoped single-phase ε-Ga2O3 epitaxial films prepared by MOCVD are reported. It is shown that this still unexplored polymorph of gallium oxide possesses wide bandgap and very high dark resistivity, thus allowing the design and fabrication of solar-blind UV photodetectors. Simple cost-effective photoresistors, fabricated by direct deposition of the epilayers on...
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