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An integrated laser assisted process using a commercial ArF-Excimer Laser has been used for producing thin amorphous hydrogenated silicon–germanium–carbon (a-SiGeC:H) films on 3-inch Si(100) wafers and for inducing the heteroepitaxial growth of a SiGeC alloy in selected regions of the wafer. The process combines two established laser assisted techniques: laser induced chemical vapour deposition (LCVD)...
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