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We report on the structure and performance of 4H-SiC p+-n APDs fabricated in a fully planar technology. A dark current density lower than 10 nA/cm2 at 30-V reverse bias and a breakdown voltage of 88 V were observed. A gain as high as 105 was measured at 94-V reverse bias, confirming the avalanche multiplication working condition. The maximum responsivity value was measured at 270 nm, increasing from...
The ELI-NP Gamma Beam System will deliver an intense gamma beam, in an energy range from 1 to 20 MeV, with unprecedented specifications in terms of brilliance, photon flux and energy bandwidth. A characterization system providing a measurement of the energy spectrum, intensity, space and time profile of the beam is essential for the commissioning and the development of the source, as well as to demonstrate...
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