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High-quality (112)B HgCdTe/Si epitaxial films with a dislocation density of ∼9 × 105 cm−2 as determined by etch pit density (EPD) measurements have been obtained by thermal cyclic annealing (TCA). The reduction of the dislocation density by TCA has led to a simple rate-equation-based model to explain the relationship between dislocation density and TCA parameters (time, temperature, and number of...
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