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We demonstrate experimentally a capacitorless IT-DRAM fabricated with 28 nm FDSOI. The Z2-FET memory cell features a large current sense margin and long retention time at T = 25°C and 85°C. Systematic measurements show that Z2-FET exhibits negligible OFF-state current at low drain/gate bias and is suitable as a low-power embedded memory.
A new miniature Dual Behavior Resonator (DBR) topology with capacitors placed in series between the feed lines and the stubs is demonstrated. Design equations are derived. For a proof-of-concept, a first-order prototype with a 1-GHz working frequency and 70% size reduction is realized, measured and compared to a classical DBR. The design method is simpler and more accurate compared to a miniaturized...
Loading transmission lines by capacitors is an effective way of miniaturization. However, it exists generally a trade-off between miniaturization and performances. In this paper, a careful comparison is carried out between a loaded transmission line and an equivalent unloaded one. Results show that a high miniaturization percentage can be achieved (55%) on a low cost substrate, together with an improved...
In this paper, we explore the possibility of using circular patch antennas loaded by capacitors allowing to reduce their size in a very significant way (30%). We have encouraging experimental results relating to antennas functioning between 1,77 GHz and 2,52 GHz developed on low cost FR4 substrate with addition of surface-mount components. The suggested topology can lead in the long term to an integrated...
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