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This study implements the CMOS-MEMS Fabry-Perot interferometer (FPI) with tunable resonant cavity. Using standard TSMC 0.35μm 2P4M CMOS process, the features of this design are as follows, (1) two optical resonant cavities are provided by the transparent oxide layer and air-gap, (2) oxide thickness is determined by post-CMOS etching process, (3) tunable gap can be controlled by integrated CMOS circuit,...
This study presents the use of nanoporous anodic aluminum oxide (np-AAO) for Fabry-Perot interferometer (FPI). The merits of this np-AAO Fabry-Perot interferometer are as follows, (1) in-use stiction of the actuation np-AAO membrane can be reduced by the nanoporous textures, (2) dielectric charging can be largely reduced by np-AAO material in this study, thus the offset voltage of the polarities close...
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