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Complex technologies merging low-voltage bipolar devices and power transistors allow more smart functions at low chip cost but pose problems during the design phase because there is no way to predict the influence of the high-voltage transistor over the control components by using standard BJT models. In this work we introduce a dynamic model for the five-terminal bipolar devices used in these smart...
A procedure to derive a conmplete set of piecewise continuous orthogonal functions able to represent wide ranges of experimental data for VLSI MOSFETs by using simple analytical device models, is presented. Based on this procedure and starting from zero-order models, a new methodology to build-up accurate empirical models which are continuous functions of all bias voltages and parameters is proposed...
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