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The effect of the growth temperature and V/III flux ratio on the morphology and microstructure of GaAs nanowires grown on GaAs (111) B substrates by Au-assisted molecular beam epitaxy with solid As 4 source was investigated. It has been found that a low growth temperature of 400°C can result in defect-free wurtzite structured nanowire with syringe-like morphology, while nanowires with...
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