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Planar microwave diodes have been fabricated from n-GaAs/N-(GaAl)As heterojunction layers grown on semi-insulating substrates by l.p.e. The diodes have successfully been used for detection and, for the first time, for down-conversion of X- and Ku-band signals, indicating that this type of diode is an attractive substitute for the Schottky-barrier diode.
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