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The punch-through protection mechanism should prevent the implants of silicon detectors from floating to arbitrarily high voltages in case of possible beam loss accidents. Typical characterization of the punch-through effect is carried out by applying an external voltage between an implant and the bias rail and measuring the resulting current. Future work will focus on quantitative understanding of...
We report on the measurement of interstrip parameters of p-type silicon strip sensors which we are developing in a large collaboration to be used in a future tracker for the LHC upgrade. We measure on test structures with about 1 cm long strips the interstrip resistance, interstrip capacitance (at 1 MHz) and punch-through protection both pre-rad and after irradiation with 70 MeV protons to a fluence...
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