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InGaN/GaN multi-quantum well (MQW) light-emitting diodes (LEDs) with indium tin oxide (ITO) as widow layers were fabricated. The ITO surface was textured utilizing the natural lithography combined with the inductively coupled plasma (ICP) etching technology by use of polystyrene spheres as the etching mask. The morphologies of the textured ITO surface were characterized by a scanning electron microscope...
InGaN/GaN multi-quantum well (MQW) light-emitting diodes (LEDs) with indium tin oxide (ITO) and Ni/Au p-contacts were fabricated. ITO (500nm) and Ni/Au (2nm/9nm) films were deposited onto p-GaN epitaxial layers by an e-beam evaporation system. For the LEDs using in situ annealed ITO and Ni/Au films as p-contacts, the forward voltage at 20mA was 3.5 and 3.2V, respectively. Under the same amount of...
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