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Cleaning copper (Cu) prior graphene deposition, is a crucial step for removing most surface impurities and hence ensuring production of monolayer, large area graphene film with good quality. In this study, we investigated the effect of Cu-cleaning using three different etchants (ammonium persulfate (APS), ferric chloride (FeCl3) and nitric acid (HNO3)) for short and long times (30s and 5min) on Cu...
Understanding the mechanism of graphene synthesis by chemical vapor deposition and the effect of process parameters is critical for production of high-quality graphene. In the present work, we investigated the effect of H2 concentration during annealing on evolution of Cu surface morphology, and on deposited graphene characteristics. Our results revealed that H2 had a smoothening effect on Cu surface...
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