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Sub-1 nm Cu difïusion barriers are realized by using transferred CVD-grown hexagonal boron nitride (h-BN) and directly deposited molybdenum disulfide (MoS2), for the first time. Based on time-dependent dielectric breakdown measurements, the diffusion barrier properties of these 2D materials are explored to address the barrier/liner scaling challenge for the ultra-scaled interconnect technology. The...
We demonstrate a novel bandgap engineering approach in a new class of 2D layered materials, semiconducting transition metal dichalcogenides (TMDs). Our approach does not require sophisticated growth systems and the bandgap size of the channel material can be dynamically adjusted during the device operation to meet the requirement of a specific application. We will show that the transfer characteristics...
The nature of source/drain contacts in graphene field-effect transistors (GFETs) is investigated. We argue that the energy dispersion of the graphene portion underneath of the metal electrodes is substantially altered compared to its original. Moreover, different from other materials, the Fermi levels of these graphene segments are not pinned by the metal contacts, but instead can be modulated by...
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