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High-quality p-type CuCrO2 thin films have been deposited on (001) sapphire substrates by the sol–gel method which is low cost, easy setup, large area coating, and mass production. The sol–gel derived films were pretreated at 400 °C for 20 min in air and then annealed at 600–1000 °C for 1 h in flowing nitrogen gas (N2). The influence of annealing temperature on the structural and optoelectronic properties...
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