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In this work, the Type I InGaAsSb/AlGaAsSb multiple-quantum-wells (MQWs) has been grown by molecular beam epitaxy (MBE). The comprised five InGaAsSb quantum wells are embedded in AlGaAsSb barriers, the barriers/QWs periodicity matches to GaSb substrates, and satellite peaks indicate a good crystalline quality. The central peak emission wavelength is around 2.0 μm at room temperature by photoluminescence...
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